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Silicon Carbide Substrate 8inch Procudtion/Dummy/NG Grade N Type 4H SiC Wafer IGBT

Sale priceCHF 1,262.00

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Grade:
Thickness:

♦️High-quality SiC wafer for Research and Experiment.

♦️Provide thinning process, thickness from 100um.

♦️Global shipping, secure payment, large inventory.

♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.

 

SiC Substrate Specification:

  • Size: 8inch;

  • Diameter: 200mm±0.2;

  • Thickness: 350um±25;

  • Surface Orientation: 4 toward [11-20]±0.5°;

  • Notch orientation:[1-100]±5°;

  • Notch depth: 1~1.5mm;

  • Micropipe: <2ea/cm2;

  • Resistivity: 0.014~0.028Ω;

  • EPD: <500ea/cm2;

  • TED: <7000ea/cm2;

  • BPD: <2000ea/cm2;

  • TTV≤10um;

  • Warp≤35um;

  • Bow≤-25~25umum;

  • Poly areas: None;

  • Chips/Indents: None;

  • Scratch:≤5,Total Length≤Diameter;

  • Stain: None;

  • Wafer edge: Chamfer;

  • Surface finish: Double Side Polish, Si Face CMP;

  • Packing: Multi-wafer Cassette Or Single Wafer Container;

sic substrate  6 Inch Product Grade
Silicon Carbide Substrate 8inch Procudtion/Dummy/NG Grade N Type 4H SiC Wafer IGBT Sale priceCHF 1,262.00

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