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Silicon Carbide Substrate 6inch Production/Dummy Grade 4H N Type SiC Wafer IGBT

Precio de oferta€751,95 EUR

Grade:
Number Of Item:

♦️High-quality SiC wafer for Research and Experiment.

♦️Provide thinning process, thickness from 100um.

♦️Global shipping, secure payment, large inventory.

♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.

 

SiC Substrate Specification:

  • Size: 6inch;

  • Diameter: 150mm±0.25;

  • Thickness: 350um±25;

  • Surface Orientation: 4°toward[11-20]±5°;

  • Primary Flat orientation:[1-100]±5°;

  • Primary Flat Length:47.5mm±1.5;

  • Secondary flat: None;

  • Micropipe: ≤0.15/cm2;

  • BPD:≤800ea/cm2;

  • TSD:≤200ea/cm2;

  • Resistivity: 0.015~0.028Ω;

  • TTV≤10um;

  • Warp≤15um;

  • Bow≤20um;

  • Surface Roughness: Si face Ra<0.2 nm;

  • Cracks: None;

  • Scratches: ≤5ea/mm;

  • Edge Chips: None;

  • Surface finish: Double Side Polish, Si Face CMP;

  • Packing: Multi-wafer Cassette Or Single Wafer Container;

sic substrate  6 Inch Product Grade
Silicon Carbide Substrate 6inch Production/Dummy Grade 4H N Type SiC Wafer IGBT Precio de oferta€751,95 EUR

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