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Silicon Carbide EPI Substrate 6inch Production Grade SiC Wafer IGBT

Precio de oferta€1.981,95 EUR

Number Of Item:

♦️High-quality SiC wafer for Research and Experiment.

♦️Provide small quantities, special specifications products, and customized services.

♦️Global shipping, secure payment, large inventory.

♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.

 

SiC Substrate Specification:

  • Size: 6inch;

  • Diameter: 150mm±0.5;

  • Thickness: 350 um±25;

  • Type:off-axis: N-Type;

  • Primary flat Location:<1120>+/-5degree

  • Epi-surface Inspection

  • surface pits (size > 0.2um):≦ 5000 ea

  • surface defect (size > 10um):≦ 1 ea/cm-2;

  • BPD counts:≦ 20 ea

  • Die yield (2*2mm, EE 5mm):≧ 95%;

  • Buffer Layer

  • Target Thickness (avg.):0.5um±10%;

  • Target Doping concentration (avg.):;1.0E18/cm3 ±10%;

  • Drift Layer

  • Target Thickness (avg.):10um ±6%;

  • Target Doping concentration (avg.):8.5E15/cm3 ±10%;

  • Wafer edge: Chamfer;

  • Surface finish: Double Side Polish, Si Face CMP;

  • Packing: Multi-wafer Cassette Or Single Wafer Container;

Silicon Carbide EPI Substrate 6inch Production Grade SiC Wafer IGBT
Silicon Carbide EPI Substrate 6inch Production Grade SiC Wafer IGBT Precio de oferta€1.981,95 EUR

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Unite Kingdom

Contact: Elsa

Email: elsa@fuledatech.com

Tel: +44-7972294236

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Email: sophie@sokatec.com

Tel: +1-6463916255

Japan

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Email: shon@fuledatech.com

Tel:+81-368203586

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Email: kim@fuledatech.com

Tel: +82-1090065688

India

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Email:chraiseto@fuledatech.com

Tel: +91-9488669046

Worldwide shipping

Worldwide shipping wit Fedex or DHL etc

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