Silicon wafer 4inch N Type 0.01~0.09Ω Oxide Layer 300nm Semiconductor Substrate - Soka Technology
Silicon wafer 4inch N Type 0.01~0.09Ω Oxide Layer 300nm Semiconductor Substrate - Soka Technology

SOKA TECHNOLOGY

Silicon wafer 2inch P Type 0.001~0.005Ω Oxide Layer 300nm Semiconductor Substrate

Sale price$350.00 USD
Specification:P(100) 279um Oxide Layer 300nm
Number Of Items:25 Items
Quantity:
♦️High-quality silicon wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
  • Size: 3inch;
  • Method: CZ;
  • Type: P;
  • Dopant: B;
  • Orientation:100;
  • Resistivity: 0.001~0.005Ω;
  • Thickness: 380um±25;
  • Oxide film: 200nm (one sides);
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case;