Silicon wafer 4inch 300nm Oxide Layer Semiconductor Substrate Borofloat Glass Wafer - Soka Technology
Silicon wafer 4inch N - type 0.002~0.004Ω Oxide Layer Semiconductor Substrate - Soka Technology
Silicon wafer 4inch N - type 0.002~0.004Ω Oxide Layer Semiconductor Substrate - Soka Technology

SOKA TECHNOLOGY

Silicon wafer 4inch N-type 0.002~0.004Ω Oxide Layer Semiconductor Substrate

Sale priceCHF 25.00
Specification:N(100) 525um Oxide Layer 280nm
Number Of Items:1 Item
Quantity:

♦️ High-quality silicon wafer for Research and Experiment.
♦️ Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
  • Size: 4inch;
  • Method: CZ;
  • Type: N;
  • Dopant: As;
  • Orientation:100;
  • Resistivity: 0.002~0.004Ω;
  • Thickness: 525um±25;
  • Oxide film: 280nm (both sides);
  • TTV<10um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case ;