GaN Substrate 2inch N Type Gallium Nitride P Grade Wafer - Soka Technology
GaN Substrate 2inch N Type Gallium Nitride P Grade Wafer - Soka Technology
GaN Substrate 2inch N Type Gallium Nitride P Grade Wafer - Soka Technology
GaN Substrate 2inch N Type Gallium Nitride P Grade Wafer - Soka Technology

SOKA TECHNOLOGY

GaN Substrate 2inch N Type Gallium Nitride P Grade Wafer

€1.753,95 EUR
Number Of Items:1 Items
数量:
♦️High-quality GaN wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Gallium Nitride Specification:
  • Size: 2inch ;
  • Type: N-type ；
  • Crystal type: Single crystal
  • Diameter : 50.8mm±03 ;
  • Thickness: 400um±30 ;
  • Orientation:（0001）Ga face ;
  • C-plane off-angle toward M-axis: ≤0.5°±0.15°；
  • C-plane off-angle toward A-axis: ≤0°±0.15°；
  • (002) FWHM: ＜100 arcsec；
  • (102) FWHM: ＜100 arcsec；
  • Resistivity：＜0.02Ω；
  • Primary flat orientation: M-plane(10-10), ±2° ;
  • Primary flat length: 16±1mm；
  • Second flat orientation: Ga face, 90° clockwise from the major orientation flat ;
  • Second flat length: 8±1mm；
  • TTV＜15um;
  • Sa＜0.3nm;
  • Bow: -20um~20um;
  • Quantity and maximum size of holes and pits: ＜10@1000um；
  • Edge bevel: Beveled;
  • Front side: polished ;
  • Backside: etched ;
  • Packing: Wafer case ;